Associate Professor, Department of Physics, Chung Yuan Christian University

Chairman, Department of Physics, Chung Yuan Christian University

Professor, Department of Physics, Chung Yuan Christian University

Chairman of the Master’s Program of Science in Nanotechnology, Chung Yuan Christian University

Dean of the College of Science, Chung Yuan Christian University

Field Theory

Associate Professor, Department of Physics, Chung Yuan Christian University

Professor, Department of Physics, Chung Yuan Christian University

Chairman, Department of Physics, Chung Yuan Christian University

 TSMC (TSMC) Epitaxy Engineer, TSMC

  (AOT)  (AOT) Senior Research and Development Engineer, Advanced Optoelectronics Technology, Inc.(AOT)

 Adjunct Associate Professor, Department of Electronic Engineering,  Chung Yuan Christian University

 Photoelectric Semiconductor Device Fabrication (LEDs, solar cell, VCSEL)

• Tzu-Neng Lin, Svette Reina Merden Santiago, Chi-Tsu Yuan, Kuo-Pin Chiu, Ji-Lin Shen, Ting-Chun Wang, Hao-Chung Kuo, Ching-Hsueh Chiu, Yung-Chi Yao and Ya-Ju Lee, “Enhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum Dots,” Scientific Reports, to be published, (2017). (SCI Impact Factor= 5.578)
• T. N. Lin, M. R. Inciong, S. R. M. S. Santiago, T. W. Yeh1, W. Y. Yang, C. T. Yuan, J. L. Shen, H. C. Kuo and C. H. Chiu, “Photo-induced Doping in GaN Epilayers with Graphene QuantumDots,” Scientific Reports, Vol. 6 p. 23260, (2016). (SCI Impact Factor= 5.578)
• Yu-Lin Tsai, Sheng-Wen Wang, Jhih-Kai Huang, Lung-Hsing Hsu, Ching-Hsueh Chiu, Po-Tsung Lee, Peichen Yu, Chien-Chung Lin, and Hao-Chung Kuo, “Enhanced power conversion efficiency in InGaN based solar cells via graded composition multiple quantum wells,” Optics Express , Vol. 23, No.24 p.A1434-1441, (2015). (SCI Impact Factor= 3.546)
• J. C. Huang, J. L. Shen, C. M. Chu, J. M. Yeh, Y. H. Chen-Yang, C. H. Chiu and H. C. Kuo, “Hybrid Dendrimer/Semiconductor Nanostructures with EfficientEnergy Transfer via Optical Waveguiding” J. Phys. Chem. C to be published (2015) (SCI Impact Factor= 4.835)
• C. H. Chiu, Y. W. Lin, M. T. Tsai, B. C. Lin, Z. Y. Li, P. M. Tu, S. C. Huang, Earl Hsu, W. Y. Uen, W. I. Lee and H. C. Kuo “Improved output power of GaN-based ultraviolet light-emitting diodes with sputtered AlN nucleation layer,”Journal of Crystal Growth 414, 258–262, (2015). (SCI Impact Factor= 1.693)
• Ming-Ta Tsai, Che-Hsuan Huang, Chung-Ming Chu, Yin-Hao Wu, Ching-Hsueh Chiu, Zhen-Yu Li, Po-Min Tu, Wei-I Lee and Hao-Chung Kuo, “The Effect of Free-standing GaN substrate on Carrier Localization in Ultraviolet InGaN Light-Emitting Diodes” Nanoscale Research Letters, Vol. 9 pp. 675, (2014) (SCI Impact Factor= 2.48)
• Chia-Yu Lee, An-Jye Tzou, Bing-Cheng Lin, Yu-Pin Lan, Ching-Hsueh Chiu, Gou-Chung Chi, Chi-Hsiang Chen, Hao-Chung Kuo, Ray-Ming Lin and Chun-Yen Chang, “Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate” Nanoscale Research Letters,  Vol. 9 pp. 505, (2014) (SCI Impact Factor= 2.48)
• T. N. Lin, Y. L. Chang, G. W. Shu, C. T. Yuan, J. L. Shen, C. H. Chiu, H. C. Kuo, C. A. J. Lin, W. H. Chang, H. H. Wang, C. H. Su and H. I. Yeh “Waveguide based energy transfer with gold nanoclusters for detection of hydrogen peroxide ” Royal Society of Chemistry, Vol. 4 pp. 30392, (2014) (SCI Impact Factor= 2.562)
• Bing-Cheng Lin, Ching-Hsueh Chiu, Chia-Yu Lee, Hau-Vei Han,  Po-Min Tu, Tzu-Pei Chen, Zhen-Yu Li, Po-Tsung Lee, Chien-Chung Lin, Gou-Chung Chi, Chi-Hsiang Chen,  Bin Fan, Chun-Yen Chang, and Hao-Chung Kuo“Performance enhancement of GaN-based flip-chip ultraviolet light-emitting diodes with a RPD AlN nucleation layer on patterned sapphire substrate ”Optical Materials Express, Vol. 4, No. 8 pp. 1632, (2014) (SCI Impact Factor= 2.616)
• B. C. Lin, Y. A. Chang, K. J. Chen, C. H. Chiu, Z. Y. Li, Y. P. Lan, C. C. Lin, P. T. Lee, Y. K. Kuo, H. C. Kuo, T. C. Lu, and S. C. Wang “Design and fabrication of InGaN vertical-cavity surface-emitting laser with composition-graded electron blocking layer,” Laser Physics Letters, , Vol.11  pp. 085002, (2014). (SCI Impact Factor= 7.71)
• Zhen-Yu Li, Chia-Yu Lee, Da-Wei Lin, Bing-Cheng Lin, Kun-Ching Shen, Ching-Hsueh Chiu, Po-Min Tu, Hao-Chung Kuo, Wu-Yih Uen, Ray-Hua Horng, Gou-Chung Chi, Chun-Yen Chang “High-efficiency and Crack-free InGaN-based LEDs on a 6-inch Si (111) substrate with a composite buffer layer structure and quaternary superlattices electron-blocking layers,” IEEE Journal of Quantum Electronics, , Vol. 50, no. 5, pp. 354-363, (2014). (SCI Impact Factor= 1.83)
• Bing-Cheng Lin, Kuo-Ju Chen, Chao-Hsun Wang, Ching-Hsueh Chiu, Yu-Pin Lan, Chien-Chung Lin, Po-Tsung Lee, Min-Hsiung Shih, Yen-Kuang Kuo, and Hao-Chung Kuo, “Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer,” Optics Express , Vol. 22, No.1 p.463-469, (2014). (SCI Impact Factor= 3.546)
• Bing-Cheng Lin, Kuo-Ju Chen, Yu-Pin Lan, Ching-Hsueh Chiu, Chien-Chung Lin, Po-Tsung Lee, Hao-Chung Kuo “Advantages of Blue LEDs With Graded-Composition AlGaN/GaN Superlattice EBL,” IEEE Photonics technology letters, , VOL. 25, NO. 21, Nov 1, (2013). (SCI Impact Factor= 2.038)
• T. N. Lin, L. T. Huang, G. Shu, C. T. Yuan, Ji-Lin Shen, C. A. Lin, W. H. Chang, C. H, Chiu, D. Lin, C. C. Lin, and H. C. Ku “Distance dependence of energy transfer from InGaN quantum wells to graphene oxide” Optics Letters, Vol. 38, p.2897-2899, (2013). (SCI Impact Factor= 3.385)
• Jun Yin, Chuang Yue, Yashu Zang, Ching-Hsueh Chiu, Jinchai Li, Hao-Chung Kuo, Zhihao Wu, Jing Li, Yanyan Fang and Changqing Chen “Effect of the Surface-Plasmon-Exciton coupling and charge transfer process on the photoluminescence of metal-semiconductor nanostructures,” Nanoscale, Vol. 5, 4436-4442, (2013). (SCI Impact Factor= 6.233)
• G. W. Shu, C. H. Chiu, L. T. Huang, T. N. Lin, C. C. Yang, J. S. Wang, C. T. Yuan, J. L. Shen, H. C. Kuo, C. A. J. Lin, W. H. Chang, H. H. Wang, H. I. Yeh, W. H. Chang, W. C. Fan and W. C. Chou “Efficient energy transfer from InGaN quantum wells to Ag nanoparticles,” Physical Chemistry Chemical Physics, Vol. 15, 3618-3622, (2013). (SCI Impact Factor= 3.829)
• G. W. Shu, J. Y. Lin, H. T. Jian, J. L. Shen, S. C. Wang, C. L. Chou, W. C. Chou, C. H. Wu, C. H. Chiu, and H. C. Kuo, “Optical coupling from InGaAs subcell to InGaP subcell in InGaP/InGaAs/Ge multi-junction solar cells,” Optics Express , Vol. 21, No. S1, (2013). (SCI Impact Factor= 3.546)
• Cheng-Chang Chen, Ching-Hsueh Chiu, Shih-Pang Chang, M. H. Shih, Ming-Yen Kuo, Ji-Kai Huang, Hao-Chung Kuo, Shih-Pu Chen, Li-Ling Lee, and Ming-Shan Jeng,“Large-area ultraviolet GaN-based photonic quasicrystal laser with high-efficiency green color emission of semipolar {10-11} In_0.3Ga_0.7N/GaN multiple quantum wells,” Applied Physics Letters 102, 011134 (2013). (SCI Impact Factor= 3.79)
• Ching-Hsueh Chiu, Lung-Hsing Hsu, Chia-Yu Lee, Chien-Chung Lin, Bo-Wen Lin, Shang-Ju Tu, Yan-Hao Chen, Che-Yu Liu, Wen-Ching Hsu, Yu-Pin Lan, Jinn-Kong Sheu, Tien-Chang Lu, Gou-Chung Chi, Hao-Chung Kuo, Shing-Chung Wang, Chun-Yen Chang, “Light extraction enhancement of GaN-based light emitting diodes using crown shaped patterned sapphire substrates ,” IEEE Photonics technology letters, VOL. 24, NO. 14, JULY 15, (2012). (SCI Impact Factor= 1.815)
• Cheng-Chang Chen, Ching-Hsueh Chiu, Po-Min Tu, Ming-Yen Kuo, M. H. Shih ,Ji-Kai Huang, Hao-Chung Kuo, Hsiao-Wen Zan, and Chun-Yen Chang, “Large Area of Ultraviolet GaN-Based Photonic Quasicrystal Laser,” Japanese Journal of Applied Physics, 51, 04DG02, (2012). (SCI Impact Factor= 1.096)
• C. H. Chiu, P. M. Tu, S. P. Chang, C. C. Lin, C. Y. Jang, Z. Y. Li, H. C. Yang, H. W. Zan, H. C. Kuo, T. C. Lu, and S. C. Wang, and C. Y. Chang, “Light output enhancement of GaN-based light-emitting diodes by optimizing SiO2 nanorod-array depth patterned sapphire substrate,” Japanese Journal of Applied Physics, 51, 04DG11, (2012). (SCI Impact Factor= 1.096)
• Ching-Hsueh Chiu, Chien-Chung Lin, Hau-Vei Han, Che-Yu Liu, Yan-Hao Chen, Yu-Pin Lan, Peichen Yu, Hao-Chung Kuo, Tien-Chang Lu, Shing-Chung Wang and Chun-Yen Chang, “High Efficiency GaN-based Light Emitting Diodes with Embedded Air Voids/SiO₂ Nanomasks” Nanotechnology, 23, 045303, (2012). (SCI Impact Factor= 3.838)
• Yow-Gwo Wang, Shu-Wei Chang, Cheng-Chang Chen, Ching-Hsueh Chiu, Ming-Yen Kuo, M. H. Shih, and Hao-Chung Kuo, “Room temperature lasing with high groupindex in metal-coated GaN nanoring” Applied Physics Letters, 99, 251111, (2011). (SCI Impact Factor= 3.82)
• Ching-Hsueh Chiu, Chien-Chung Lin, Po-Min Tu, Shih-Cheng Huang, Chia-Cheng Tu, Jin-Chai Li, Zhen-Yu Li, Wu-Yih Uen, Hsiao-Wen Zan, Tien-Chang Lu, Hao-Chung Kuo, Shing-Chung Wang and Chun-Yen Chang,“Improved Output Power of InGaN-Based Ultraviolet LEDs Using a Heavily Si-Doped GaN Insertion Layer Technique,” IEEE Journal of Quantum Electronics, Vol. 48, no. 2, pp. 175-181, (2012). (SCI Impact Factor= 2.013)
• D. W. Lin, C. C. Lin, C. H. Chiu, C. Y. Lee, Y. Y. Yang, Z. Y. Li, W. C. Lai, T. C. Lu, H. C. Kuo, S. C. Wang“GaN-based LEDs Grown on HVPE Growth High Crystalline Quality Thick GaN Template” Journal of The Electrochemical Society, 158 (11) H1103-H1106, (2011). (SCI Impact Factor= 2.241)
• Bo-Siao Cheng, Yun-Lin Wu, Tien-Chang Lu, Ching-Hsueh Chiu, Cheng-Hung Chen, Po-Min Tu, Hao-Chung Kuo, and Shing-Chung Wang, “High Q Microcavity Light Emitting Diodes with Buried AlN Current Apertures” Applied Physics Letters, (2011), 99, 041101, (2011). (SCI Impact Factor= 3.82)
• Chu-Li Chao, Rong Xuan, Hsi-Hsuan Yen, Ching-Hsueh Chiu, Yen-Hsiang Fang, Zhen-Yu Li, Bo-Chun Chen, Chien-Chung Lin, Ching-Hua Chiu, Yih-Der Guo, Hao-Chung Kuo, Jenn-Fang Chen, and Shun-Jen Cheng “Reduction of Efficiency Droop in InGaN Light-Emitting Diode Grown on Self-Separated Freestanding GaN Substrates,” IEEE Photonics technology letters, VOL. 23, NO. 12, JUNE 15, (2011). (SCI Impact Factor= 1.815)
• Bo-Siao Cheng, Ching-Hsueh Chiu, Ming-Hua Lo, Yun-Lin Wu, Hao-Chung Kuo, Tien-Chang Lu, Yuh-Jen Cheng, Shing-Chung Wang, and Kuo-Jui Huang“Light Output Enhancement of UV Light-Emitting Diodes With Embedded Distributed Bragg Reflector,” IEEE Photonics technology letters, VOL. 23, NO. 10, MAY 15, (2011). (SCI Impact Factor= 1.815)
• Po-Min Tu, Chun-Yen Chang, Shih-Cheng Huang, Ching-Hsueh Chiu, Jet-Rung Chang, Wei. Ting. Chang, Dong-Sing Wuu, Hsiao-Wen Zan, Chien-Chung Lin, Hao-Chung Kuo, and Chih-Peng Hsu, “Investigation of efficiency droop for InGaN-Based UV Light-Emitting Diodes with InAlGaN Barrier,” Applied Physics Letters 98, 211107, (2011). (SCI Impact Factor= 3.78)
• Yow-Gwo Wang, Cheng-Chang Chen, Ching-Hsueh Chiu, Ming-Yen Kuo, M. H. Shih, and Hao-Chung Kuo, “Lasing in metal-coated GaN nano-stripe at room temperature,” Applied Physics Letters 98, 131110, (2011). (SCI Impact Factor= 3.78)
• G. W. Shu, C. C. Lin, H. T. Lin, T. N. Lin, J. L. Shen, C. H. Chiu, Z. Y. Li, H. C. Kuo, C. C. Lin, S. C. Wang, C. A. J. Lin, and W. H. Chang, “Energy transfer from InGaN quantum wells to Au nanoclusters via optical waveguiding,” Optics Express , Vol. 19, No. S2, (2011). (SCI Impact Factor= 3.477)
• Ching-Hsueh Chiu, Chien-Chung Lin, Dong-Mei Deng, Da-Wei Lin, Jin-Chai Li, Zhen-Yu Li, Gia-Wei Shu, Tien-Chang Lu, Ji-Lin Shen, Hao-Chung Kuo, and Kei-May Lau,“Optical and electrical properties of GaN-based light emitting diodes grown on micro and nano-scale patterned Si substrate,” IEEE Journal of Quantum Electronics, Vol. 47, no. 7, pp. 899-906, (2011). (SCI Impact Factor= 2.013)
• Ching-Hsueh Chiu, Da-Wei Lin, Chien-Chung Lin, Zhen-Yu Li, Wei-Ting Chang, Hung-Wen Hsu, Hao-Chung Kuo, Tien-Chang Lu, Shing-Chung Wang, Wei-Tsai Liao, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, and Nobuhiko Sawaki, “Reduction of efficiency droop in semi-polar (101) InGaN/GaN light emitting diodes grown on patterned silicon substrates,” Applied Physics Express, 4  012105, (2011). (SCI Impact Factor=2.223)
• S. P. Chang, C. H. Wang, C. H. Chiu, J. C. Li, Y. S. Lu, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Characteristics of efficiency droop in GaN-based light emitting diodes with an insertion layer between the multiple quantum wells and n-GaN layer,” Applied Physics Letters 97, 251114, (2010). (SCI Impact Factor= 3.78)
• Cheng-Chang Chen, Ching-Hsueh Chiu, Yi-Chun Yang, M. H. Shih, Jun-Rong Chen, Zhen-Zu Li, Hao-Chung Kuo, Tien-Chang Lu, “Tunable Light Emission Enhancement of GaN-Based Photonic Crystal With Ultraviolet AlN/AlGaN Distributed Bragg Reflector,” Japanese Journal of Applied Physics, 50, 04DG09, (2011). (SCI Impact Factor= 1.096)
• Dongmei Deng, Ching-Hsueh Chiu, Hao-Chung Kuo, Peng Chen, Kei May Lau, “Material characteristics of InGaN based light emitting diodes grown on porous Si substrates,”Journal of Crystal Growth 315, 238–241, (2011). (SCI Impact Factor= 1.779)
• Ching-Hsueh Chiu, Da-Wei Lin, Chien-Chung Lin, Zhen-Yu Li, Yi-Chen Chen, Shih-Chun Ling, Hao-Chung Kuo, Tien-Chang Lu, Shing-Chung Wang, Wei-Tsai Liao, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Nobuhiko Sawaki, “Optical properties of (101) semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates,” Journal of Crystal Growth 318, 500–504, (2011). (SCI Impact Factor= 1.779)
• C. H. Chiu, P. M. Tu, C. C. Lin, D. W. Lin, Z. Y. Li, K. L. Chuang, J. R. Chang, member, T. C. Lu, H. W. Zan, C. Y. Chen, H. C. Kuo, senior member, S. C. Wang, OSA Fellow and C. Y. Chang,^, IEEE Fellow, “Highly Efficient and Bright LEDs Overgrown on GaN Nano-Pillar Substrates,” IEEE J. Select. Topics Quatum Electron. vol. 17, no. 4, pp. 971–978, (2011). (SCI Impact Factor= 3.137)
• Ching-Hsueh Chiu, Da-Wei Lin, Zhen-Yu Li, Chin-Hua Chiu, Chu-Li Chao, Chia-Cheng Tu, Hao-Chung Kuo, Tien-Chang Lu, and Shing-Chung Wang, “Improvement in Crystalline Quality of InGaN-Based Epilayer on Sapphire via Nanoscaled Epitaxial Lateral Overgrowth,” Japanese Journal of Applied Physics, 49,  105501, (2010). (SCI Impact Factor= 1.096)

研討會論文:

• C. H. Chiu, Y. W. Lin, P. M. Tu, S. C. Huang, C. P. Hsu, B. C. Lin and H. C. Kuo, “Improved output power of GaN-based ultraviolet light-emitting diodes with sputtered AlN nucleation layer,” 17th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XVII), (2014).
• Y. W. Lin, C. H. Chiu, P. M. Tu, S. C. Huang, C. P. Hsu, B. C. Lin and H. C. Kuo “Highly efficient 365 nm GaN-based ultraviolet light-emitting diodes grown on patterned sapphire substrate ,” 17th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XVII), (2014).
• Bing-Cheng Lin, Kuo-Ju Chen, Ching-Hsueh Chiu, Zhen-Yu Li, Chien-Chung Lin, Po-Tsung Lee, Min-Hsiung Shih, and Hao-Chung Kuo “Improved Crystal Quality of GaN-Based Near-Ultraviolet Light-Emitting Diodes with a Sputtered AlN Nucleation Layer ,” 17th International Conference on Metal organic Vapor Phase Epitaxy (ICMOVPE XVII), (2014).
• Ming-Ta Tsai, Chung-Ming Chu, Yin-Hao Wu, Ching-Hsueh Chiu, Zhen-Yu Li,  Chien-Chung Lin, Wei-I Lee, Hao-Chung Kuo, Kei-May Lau, “Enhancing the Emission Efficiency of InGaN Based LEDs by Using Nano-patterned Si (111) Substrate,” Conference on LED and Its Industrial Application (ISNE), (2014).
• Ming-Ta Tsai, Chung-Ming Chu, Yin-Hao Wu, Ching-Hsueh Chiu, Po-Min Tu,  Zhen-Yu Li, Chien-Chung Lin, Wei-I Lee, Hao-Chung Kuo, Chun-Yen Chang, “Reduction of Efficiency Droop in Ultraviolet InGaN Light-Emitting Diode Grown on Freestanding GaN Substrates,” to the 3rd International Symposium on Next-Generation Electronics (ISNE), (2014).
• C. H. Chiu, P. M. Tu, Y. W. Lin, S. C. Huang, C. P. Hsu, H. C. Kuo and C. Y. Chang, “Reduction of Efficiency Droop in Ultraviolet InGaN Light-Emitting Diode Grown on Freestanding GaN Substrates,” Conference on LED and Its Industrial Application (LEDIA’13), (2013).
• Y. W. Lin, C. H. Chiu, P. M. Tu, S. C. Huang and C. P. Hsu, “Improved Performance of Vertical Type Chip 365nm Ultraviolet Light Emitting Diodes using Carbon Nano Tube Technique,” Conference on LED and Its Industrial Application (LEDIA’13), (2013).
• C. Y. Shieh, Z. Y. Li, C. H. Chiu, P. M. Tu, H. C. Kuo, G. C. Chi, “Influence of free-standing GaN substrate on ultraviolet light emitting diodes by atmospheric pressure metal organic chemical vapor deposition,” SPIE Photonics West, (2013).
• P. M. Tu, C. H. Chiu, S. P. Chang, C. C Lin, Z. Y. Li, C. Y. Jang, H. C. Yang, H. W. Zan, H. C. Kuo, T. C. Lu, S. C. Wang, C. Y. Chang,Y. W. Lin, S. C. Huang, and C. P. Hsu “Power Enhancement of GaN-Based Blue Light-Emitting Diodes by SiO₂ Nanorod-Array Patterned Sapphire Substrate,”  International Workshop on Nitride Semiconductors (IWN), (2012).
• Y. W. Lin, S. C. Huang, D. S. Wuu, P. M. Tu, C. H. Chiu, C. P. Hsu, H. J. Chen, and T. Y. Lin “AlInGaN-Based I-line Ultraviolet Light Emitting Diodes with High Power Efficiency,” International Workshop on Nitride Semiconductors (IWN), (2012).
• Ching-Hsueh Chiu, Chien-Chung Lin, Chia-Yu Lee, Chin-Chin Yang, Dong-Mei Deng, Da-Wei Lin, Yu-Pin Lan, Tien-Chang Lu, Gou-Chung Chi, Hao-Chung Kuo, and Kei-May Lau, “Enhancing the Emission Efficiency of InGaN Based LEDs by Using Patterned Si (111) Substrate,” ICMOVPE-XVI, Busan, Korea. (2012).
• Lung-Hsing Hsu, Ching-Hsueh Chiu, Chien-Chung Lin, Chia-Yu Lee, Bo-Wen Lin, Wen-Ching Hsu, Yu-Pin Lan, Jinn-Kong Sheu, Hao-Chung Kuo, and Chun-Yen Chang, “Enhancing the Light Extraction of GaN-Based LED by Using Crown Shaped Patterned Sapphire Substrates,” ICMOVPE-XVI, Busan, Korea. (2012).
• Ching-Hsueh Chiu, Chien-Chung Lin, Hau-Vei Han, Da-Wei Lin, Yan-Hao Chen, Che-Yu Liu, Yu-Pin Lan, Hao-chung Kuo, Tien-Chang Lu, Shing-Chung Wang, “High Efficiency GaN-based Light Emitting Diodes with Embedded Air Voids/SiO₂ Nanomasks,” CLEO: 2012 in San Jose, CA. (2012).
• Ching-Hsueh Chiu, Po-Min Tu, Jet-Rung Chang, Wei-Ting Chang, Hao-Chung Kuo, Chun-Yen Chang, “Reduction of efficiency droop in InGaN-based UV light-emitting diodes with InAlGaN barrier,” SPIE Photonics West, USA. (2012).
• Ching-Hsueh Chiu, Chien-Chung Lin, Hao-Wei Han, Da-Wei Lin, Yan-Hao Chen , Hao-Chung Kuo, Tien-Chang Lu, and Shing-Chung Wang, “Enhanced Extraction and efficiency of blue GaN based LEDs with embedded micro air voids and SiO₂ nanomask,” IQEC/CLEO, Pacific Rim. (2011).
• Ching-Hsueh Chiu, Po-Min Tu, Chun-Yen Chang, Shih-Cheng Huang, Jet-Rung Chang, Wei. Ting. Chang, Dong-Sing Wuu, Hsiao-Wen Zan, Chien-Chung Lin, Hao-Chung Kuo, and Chih-Peng Hsu, “Reduction of efficiency droop in InGaN-Based UV Light-Emitting Diodes with InAlGaN Barrier,” OECC, Taiwan. (2011).
• Ching-Hsueh Chiu, Po-Min Tu, Shih-Cheng Huang, Jet-Rung Chang, Wei-Ting Chang, Chien-Chung Lin, Hao-Chung Kuo, and Chun-Yen Chang, “Investigation of efficiency droop for InGaN-Based UV Light-Emitting Diodes with InAlGaN Barrier,” ICNS-9, Glasgow. (2011).
• Ching-Hsueh Chiu, Yow-Gwo Wang, Cheng-Chang Chen, Ming-Yen Kuo, M. H. Shih, and Hao-Chung Kuo, “Lasing in metal-coated GaN nano-stripe at room temperature,” ICNS-9, Glasgow. (2011).
• Ching-Hsueh Chiu, Chien-Chung Lin, Dongmei Deng, Da-Wei Lin, Jin-Chai Li, Zhen-Yu Li, Gia-Wei Shu, Tien-Chang Lu, Ji-Lin Shen, Hao-Chung Kuo, and Kei-May Lau, “Optical and electrical properties of GaN-based light emitting diodes grown on micro and nano-scale patterned Si substrate,” SPIE Optical Engineering + Applications 21-25 August 2011 in San Diego, California United States. (2011).
• Ching-Hsueh Chiu, Da-Wei  Lin, Chien-Chung  Lin, Zhen-Yu Li, Hao-chung Kuo, Tien-Chang Lu, Shing-chung Wang, Wei-Tsai Liao, Tomoyuki  Tanikawa, Yoshio  Honda, Masahito Yamaguchi, Nobuhiko  Sawaki, “Reduction of Efficiency Droop in Semipolar (1-101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates,” CLEO: 2011 in Baltimore, Maryland. (2011).
• Ching-Hsueh Chiu, Chung-Ying Jang , Shih-Pang Chang, C.-H. Wang, Zhen-Yu Li, Hao-Chung Kuo , Tien-Chang Lu, Shing-Chung Wang, “High efficiency GaN-based light emitting diodes grown on nano-patterned substrates,”SPIE Photonics West, (2011).
• Zhen-Yu Li, Ching-Hsueh Chiu, Da-Wei Lin, Shih-Chun Ling, Hao-Chung Kuo, Tien-Chang Lu, Shing-Chung Wang, Wei-Tasi Liao, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Nobuhiko Sawaki,“Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate,”SPIE Photonics West, (2011).
• Da-Wei Lin, Ching-Hsueh Chiu, Chu-Li Chao, Zhen-Yu Li, Jin-Chai-Li, Yi-Chen Chen, Chia-Cheng Tu, Rong Xuan, Yen-Hsiang Fang, Bo-Jean Chen, Yih-Der Guo, Jenn-Fang Chen, Hao-Chung Kuo, and Shun-Jen Cheng, Low Efficiency Droop InGaN Light Emitting Diode Grown on Freestanding GaN Substrate Made by Nano-patterned, Optics and Photonics (OPT), Taiwan, 2010.
• Chia-Cheng Tu, Da-Wei Lin, Ching-Hsueh Chiu, Zhen-Yu Li, Po-Min Tu, Shih-Cheng Huang, Wu-Yih Uen, Hao-Chung Kuo, Shing-Cheng Wang , “Effect of Heavily Si-Doped Layer on the Performance of 375 nm Ultraviolet Light-Emitting Diode,”Optics and Photonics (OPT), Taiwan, 2010.
• C. H. Chiu, C. L. Chao, D. W. Lin, Z. Y. Li, H. C. Kuo, T. C. Lu, S. C. Wang,“Reduction in efficiency droop in InGaN/GaN MQWs light-emitting diodes grown on free standing GaN substrate,” International Conference on Solid State Devices and Materials (SSDM), Tokyo, Japan, (2010).
• Kai-Lin Chuang, Jet-Rung Chang, Po-Min Tu, Ching-Hsueh Chiu, Yun-Jin Li, Hsiao-Wen Zan, Hao-Chung Kuo, Chun-Yen Chang, “An Investigation of GaN-Based LED with MBE Grown Nanopillars by MOCVD,” International Conference on Solid State Devices and Materials (SSDM),Tokyo, Japan, (2010).
• Ching-Hsueh Chiu, Chien-Chung Lin, Dongmei Deng, Jin-Chai Li, Zhen-Yu Li, Da-Wei Lin, Gia-Wei Shu, Hao-Chung Kuo, Tien-Chang Lu, Ji-Lin Shen, Kei-May Lau, “MOCVD growth and Characterization GaN based LED grown on micro and nano-scale patterned Si substrate,” The 16th international conference on crystal growth (ICCG-16), Beijing, China, (2010).
• Zhen-Yu Li, Ching-Hsueh Chiu, Da-Wei Lin, Shih-Chun Ling, Hao-Chung Kuo, Tien-Chang Lu, Shing-Chung Wang, Wei-Tasi Liao, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Nobuhiko Sawaki, “Characterization of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate by low pressure metal-organic chemical vapor deposition,” The 16th international conference on crystal growth (ICCG-16), Beijing, China, (2010).
• J. C. Li, C. H. Chiu, W. H. Yang, D. W. Lin, P. K. Huang, S. P. Li, Z. Y. Li, H. Y. Chen, D. Y. Liu, T. C. Lu, H. C. Kuo, J. Y. Kang, S. C. Wang, “Fabrication of 309 nm UV-LED using GaN/AlN QDs as active layer,” The 16th international conference on crystal growth (ICCG-16), Beijing, China, (2010).
• Chao-Hsun Wang, Shih-Pang Chang, Ching-Hsueh Chiu, Jin-Chai Li, Zhen-Yu Li, Hao-Chung Kuo, Tien-Chang Lu, Shing-Chung Wang, “Low droop InGaN/GaN LED with a low temperature GaN insertion layer,” The 16th international conference on crystal growth (ICCG-16), Beijing, China, (2010).
• Ching-Hsueh Chiu, Zhen-Yu Li, Po-Min Tu, Da-Wei Lin, Jet-Rung Chang, Tsung-Hsi Yang, Hao-Chung Kuo, Tien-Chang Lu, Shing-Chung Wang, Chun-Yen Chang, “Emission Efficiency Enhancement of GaN-based Light-emitting Diodes with MBE Grown Nano-pillar Template Substrate by MOCVD,” Material Research Society (MRS) Spring Meeting, San Francisco, USA, (2010).
• Da-Wei Lin, Ching-Hsueh Chiu, Zhen-Yu Li, Hao-Chung Kuo, Tien-Chang Lu and Shing-Chung Wang, Jet-Rung Chang, Tsung Hsi Yang, Chun-Yen Chang,“Emission Efficiency Enhencement of GaN-based Light-emitting Diodes with MBE Grown  Nano-pillar Template Substrate by MOCVD” Optics and Photonics (OPT), Taiwan, (2009).
• Ching-Hsueh Chiu, Jin Chai Li, Zhen-Yu Li, Po-Min Tu, Da-Wei Lin, Jet-Rung Chang, Tsung Hsi Yang, Hao-Chung Kuo, Tien-Chang Lu, Shing-Chung Wang, Hsiao-Wen Zan, Chun-Yen Chang,“Emission Efficiency Enhancement of GaN-based Light-emitting Diodes with MBE Grown Nano-pillar Template Substrate by MOCVD,” White LED, Taiwan, (2009).
• Ching-Hsueh Chiu, Zhen-Yu Li, Chin-Hua Chiu, Ming-Hua Lo, Da-Wei Lin, C. L. Chao, Hao-Chung Kuo, Tien-Chang Lu and Shing-Chung Wang, “Dislocation Reduction in InGaN/GaN multiple quantum wells by low-pressure MOCVD using nanorod-array patterned sapphire substrate,” IEEE NANO, Genoa, northern Italy, (2009).
• Ching-Hsueh Chiu, Zhen-Yu Li, Chin-Hua Chiu, Ming-Hua Lo, Da-Wei Lin, C. L.Chao, Hao-Chung Kuo, Tien-Chang Lu, Shing-Chung Wang,“Improvement Quality of InGaN/GaN Multiple Quantum Wells by Low-Pressure MOCVD using Nanorod-Array Patterned Sapphire Substrate,” 8th International Conference on Nitride Semiconductors (ICNS-8), ICC Jeju, Jeju, Korea, (2009).
• Ching-Hsueh Chiu, Zhen-Yu Li, Ching-Hua Chiu, Ming-Hua Lo, Da-Wei Lin, Chu-Li Chao, Hao-Chung Kuo, Tien-Chang Lu, Shing-Chung Wang, “Dislocation Reduction in InGaN/GaN multiple quantum wells by low-pressure MOCVD using nanorod-array patterned sapphire substrate” The 17TH AMERICAN CONFERNCE ON CRYSTAL GROWTH AND EPITAXY (ACCG-17), Lake Geneva, Wisconsin, USA, (2009).
• Ching-Hsueh Chiu, Zhen-Yu Li, Yu-Hsiang Huang, Da-Wei Lin, Hao-Chung Kuo, Tien-Chang Lu, Shing-Chung Wang, Chien-Te Ku, “Heteroepitaxial growth of InN/GaN multiple quantum wells with different InN well thickness by low pressure metal-organic chemical vapor deposition” The 17TH AMERICAN CONFERNCE ON CRYSTAL GROWTH AND EPITAXY (ACCG-17), Lake Geneva, Wisconsin, USA, (2009).

專書:

• C.-C. LIN, D. W. LIN, C.-H. CHIU, Z. Y. LI, Y. P. LAN, J. J. HUANG, and H.-C. KUO, “Nitride semiconductor light-emitting diodes (LEDs): Materials, technologies and applications, 2014, Woodhead Publishing Series in Electronic and Optical Materials No. 54, Chapter 7, Nanostructured LEDs
• C. H. Chiu, P. M. Tu, T. C. Hong, C. C. Peng, C. S. Huang, and S. C. Huang,“Handbook of Solid-State Lighting and LEDs”2016, Chapter 13, Technological developments of UV-LEDs.

Photoelectric Materials

Thin Film and Epitaxial Technology

Material Stress Strength

Adjunct Assistant Professor, Department of Physics, Chung Yuan Christian University